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Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study

Goel, Saurav, Luo, Xichun, Reuben, R.L., Bin Rashid, Waleed and Sun, Ji Ning (2011) Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study. Key Engineering Materials, 496. pp. 150-155. ISSN 1662-9795

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Abstract

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

Item Type: Article
Subjects: T Technology > T Technology (General)
T Technology > TJ Mechanical engineering and machinery
Schools: School of Computing and Engineering
School of Computing and Engineering > Centre for Precision Technologies
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Depositing User: Sara Taylor
Date Deposited: 13 Dec 2012 15:05
Last Modified: 13 Dec 2012 15:05
URI: http://eprints.hud.ac.uk/id/eprint/16346

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