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Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting

Goel, Saurav, Luo, Xichun, Reuben, Robert L and Rashid, Waleed (2011) Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting. Nanoscale Research Letters, 6 (1). p. 589. ISSN 1556-276X

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Abstract

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. It was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear.

Item Type: Article
Subjects: T Technology > T Technology (General)
T Technology > TJ Mechanical engineering and machinery
Schools: School of Computing and Engineering
School of Computing and Engineering > Centre for Precision Technologies
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Depositing User: Sara Taylor
Date Deposited: 15 Nov 2012 14:28
Last Modified: 15 Nov 2012 14:28
URI: http://eprints.hud.ac.uk/id/eprint/16110

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