Goel, Saurav, Luo, Xichun and Reuben, Robert L. (2012) Shear instability of nanocrystalline silicon carbide during nanometric cutting. Applied Physics Letters, 100 (23). p. 231902. ISSN 0003-6951Metadata only available from this repository.
The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
|Subjects:||T Technology > T Technology (General)
T Technology > TJ Mechanical engineering and machinery
|Schools:||School of Computing and Engineering
School of Computing and Engineering > Centre for Precision Technologies
|Depositing User:||Sara Taylor|
|Date Deposited:||15 Nov 2012 12:21|
|Last Modified:||15 Nov 2012 12:21|
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