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MIAMI: Microscope and ion accelerator for materials investigations

Hinks, J. A., Van den Berg, Jakob and Donnelly, S. E. (2011) MIAMI: Microscope and ion accelerator for materials investigations. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29 (2). 021003. ISSN 07342101

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    Abstract

    A transmission electron microscope (TEM) with in situ ion irradiation has been built at the University of Salford, U.K. The system consists of a Colutron G-2 ion source connected to a JEOL JEM-2000FX TEM via an in-house designed and constructed ion beam transport system. The ion source can deliver ion energies from 0.5 to 10 keV for singly charged ions and can be floated up to 100 kV to allow acceleration to higher energies. Ion species from H to Xe can be produced for the full range of energies allowing the investigation of implantation with light ions such as helium as well as the effects of displacing irradiation with heavy inert or self-ions. The ability to implant light ions at energies low enough such that they come to rest within the thickness of a TEM sample and to also irradiate with heavier species at energies sufficient to cause large numbers of atomic displacements makes this facility ideally suited to the study of materials for use in nuclear environments. TEM allows the internal microstructure of a sample to be imaged at the nanoscale. By irradiating in situ it is possible to observe the dynamic evolution of radiation damage which can occur during irradiation as a result of competing processes within the system being studied. Furthermore, experimental variables such as temperature can be controlled and maintained throughout both irradiation and observation. This combination of capabilities enables an understanding of the underlying atomistic processes to be gained and thus gives invaluable insights into the fundamental physics governing the response of materials to irradiation. Details of the design and specifications of the MIAMI facility are given along with examples of initial experimental results in silicon and silicon carbide.

    Item Type: Article
    Subjects: Q Science > Q Science (General)
    Q Science > QC Physics
    Schools: School of Computing and Engineering
    School of Computing and Engineering > Electron Microscopy and Materials Analysis
    Related URLs:
    Depositing User: Jonathan Hinks
    Date Deposited: 29 Nov 2012 10:46
    Last Modified: 02 Sep 2013 11:25
    URI: http://eprints.hud.ac.uk/id/eprint/16016

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