Search:
Computing and Library Services - delivering an inspiring information environment

On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Mitrovic, I. Z., Hall, S., Sedghi, N., Simutis, G., Dhanak, V. R., Bailey, P., Noakes, T. C. Q., Alexandrou, I., Engstrom, O., Lopes, J. M. J. and Schubert, J. (2012) On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks. Journal of Applied Physics, 112 (4). 044102. ISSN 0021-8979

[img] PDF - Published Version
Restricted to Registered users only

Download (1270kB)

    Abstract

    We present a detailed investigation on the nature of the interfacial layer (IL) in ultra-thin
    TiN/LaLuO3 (LLO) gate stacks, which is of importance to facilitate CMOS scaling. The molecular beam deposited LaLuO3 films are found to be amorphous by high-resolution transmission electron microscopy. A �A° thick LaLuO3/interlayer transition observed by medium energy ion scattering correlates with the presence of a dual silicate/SiO2-like interfacial layer derived from the analysis of photoelectron line positions and electron energy loss spectra. A theoretical model is used for the dielectric transition in a bi-layer LaLuO3/IL structure, linking physical and electrical characterization data. The obtained leakage current of 10�3 A/cm2 at 1.5V and equivalent oxide thickness of 0.75 nm for TiN/LaLuO3 gate stacks are adequate for scaling in the 14-12 nm node.

    Item Type: Article
    Subjects: Q Science > QC Physics
    Schools: School of Applied Sciences
    Related URLs:
    Depositing User: Paul Bailey
    Date Deposited: 09 Oct 2012 14:17
    Last Modified: 09 Oct 2012 14:17
    URI: http://eprints.hud.ac.uk/id/eprint/15028

    Document Downloads

    Downloader Countries

    More statistics for this item...

    Item control for Repository Staff only:

    View Item

    University of Huddersfield, Queensgate, Huddersfield, HD1 3DH Copyright and Disclaimer All rights reserved ©