Anisotropic strain relaxation in a-plane GaN quantum dots

Founta, S., Coraux, J., Jalabert, D., Bougerol, C., Rol, F., Mariette, H., Renevier, H., Daudin, B., Oliver, R. A., Humphreys, C. J., Noakes, T. C. Q. and Bailey, Paul (2007) Anisotropic strain relaxation in a-plane GaN quantum dots. Journal of Applied Physics, 101 (6). 063541. ISSN 0021-8979

Abstract

Medium energy ion scattering (MEIS) has been used to measure at the monolayer scale the strain profile of self-organized GaN quantum dots grown on (11–20) or a-plane AlN by molecular-beam epitaxy. By confronting the MEIS results with a structural analysis carried out by atomic force microscopy, it is established that the strain profile is anisotropic, i.e., fully elastic along [1–100] and a combination of plastic and elastic along [0001]. High resolution transmission electron microscopy measurements reveal the presence of misfit dislocations with 1/2 [0001] Burgers vector, consistent with MEIS data

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