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Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD

Chalker, Paul R., Marshall, Paul A., Potter, Richard J., Joyce, Timothy B., Jones, Anthony C., Taylor, Stephen, Noakes, Timothy C. Q. and Bailey, Paul (2005) Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. Journal of Materials Science: Materials in Electronics, 15 (11). pp. 711-714. ISSN 0957-4522

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Abstract

The hafnium and silicon precursors, Hf(NMe2)4 and ButMe2SiOH, have been investigated for the MOCVD of high- hafnium silicate, (HfO2)1–x –(SiO2) x films for gate dielectric applications. Control of the silica concentration in the hafnium silicate can be achieved by varying the relative precursor ratios up to a saturation level of 35–40% SiO2. The thermal stability of the resulting hafnium silicate films in air has been investigated using medium energy ion scattering. Internal oxidation of the underlying silicon substrate is discernable when the films are annealed in dry air for 15 min over the temperature range 800–1000 °C.

Item Type: Article
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Schools: School of Applied Sciences
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Depositing User: Sharon Beastall
Date Deposited: 12 Sep 2012 09:12
Last Modified: 12 Sep 2012 09:12
URI: http://eprints.hud.ac.uk/id/eprint/14835

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