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Morphology of enriched alloy layers in an anodized Al–Cu alloy

Garcia-Vergara, S, Skeldon, P, Thompson, G.E, Bailey, Paul, Noakes, T.C.Q, Habazaki, H and Shimizu, K (2003) Morphology of enriched alloy layers in an anodized Al–Cu alloy. Applied Surface Science, 205 (1-4). pp. 121-127. ISSN 0169-4332

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Abstract

Using medium energy ion scattering, combined with Rutherford backscattering spectroscopy, transmission electron microscopy and atomic force microscopy, the development of the copper-enriched alloy layer during anodizing of a sputtering-deposited Al–0.4 at.% Cu alloy has been examined. The enriched layer is located just beneath the amorphous alumina film that is produced on the anodized alloy. Importantly for understanding the mechanism of formation of the enriched layer, the layer is revealed to be of thickness ∼2.1 nm from the start of the anodizing, when enrichment of copper is very low, with no significant increase in the thickness of the layer as the copper enriches to ∼3×1015 Cu atoms cm−2, the maximum measured in the present experiments. The findings are consistent with a model of the layer in which the copper is present mainly in copper-rich clusters.

Item Type: Article
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Schools: School of Applied Sciences
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Depositing User: Sharon Beastall
Date Deposited: 11 Sep 2012 12:23
Last Modified: 11 Sep 2012 12:23
URI: http://eprints.hud.ac.uk/id/eprint/14806

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