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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Van den Berg, Jakob, Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, Paul and Noakes, T. C. Q. (2002) Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 20 (3). p. 974. ISSN 0734-211X

Metadata only available from this repository.
Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Applied Sciences
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Depositing User: Sharon Beastall
Date Deposited: 11 Sep 2012 11:20
Last Modified: 13 Sep 2012 10:00
URI: http://eprints.hud.ac.uk/id/eprint/14799

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