Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Van den Berg, Jakob, Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, Paul and Noakes, T. C. Q. (2002) Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 20 (3). p. 974. ISSN 0734-211X

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URI:

https://eprints.hud.ac.uk/id/eprint/14799

Title:

Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Creators:

Van den Berg, Jakob, Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, Paul and Noakes, T. C. Q.

Identification Number:

https://doi.org/10.1116/1.1477420

Official URL:

http://dx.doi.org/10.1116/1.1477420

Date:

March 2002

Subjects:

Q Science > QC Physics

Schools:

School of Applied Sciences

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