Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

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Van den Berg, Jakob, Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, Paul and Noakes, T. C. Q. (2002) Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 20 (3). p. 974. ISSN 0734-211X

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Official URL: http://dx.doi.org/10.1116/1.1477420

DOI: 10.1116/1.1477420

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Applied Sciences
Related URLs:	Author Author
Depositing User:	Sharon Beastall
Date Deposited:	11 Sep 2012 11:20
Last Modified:	13 Sep 2012 10:00
URI:	http://eprints.hud.ac.uk/id/eprint/14799

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