Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

Dowsett, M., Al-Harthi, S., Ormsby, T., Guzmán, B., Gard, F., Noakes, T., Bailey, Paul and McConville, C. (2002) Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. Physical Review B, 65 (11). p. 113412. ISSN 0163-1829

Abstract

A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.

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