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Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering

Chalker, P.R., Morrice, D., Joyce, T.B., Noakes, T.C.Q., Bailey, Paul and Considine, L. (2000) Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering. Diamond and Related Materials, 9 (3-6). pp. 520-523. ISSN 0925-9635

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Abstract

The long term stability of InGaN based light emitting- and laser-diodes is potentially compromised by phase separation and indium interdiffusion. Medium energy ion scattering has been used to investigate the diffusion of indium within In0.25Ga0.75N/GaN structures at 950°C. Comparison of the aligned and random ion scattering data for the as-deposited InGaN layer show that ca. 15% of the indium atoms are interstitial. Annealing at 950°C causes decomposition of the InGaN layer into InN and a range of lower indium content ternary phases.

Item Type: Article
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Schools: School of Applied Sciences
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Depositing User: Sharon Beastall
Date Deposited: 06 Sep 2012 11:35
Last Modified: 06 Sep 2012 11:35
URI: http://eprints.hud.ac.uk/id/eprint/14733

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