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Range and damage distributions in ultra-low energy boron implantation into silicon

Hatzopoulos, N., Suder, S., Van den Berg, Jakob, Panknin, D., Fukarek, W., Donnelly, S. E., Cook, C.E.A., Armour, D.G., Lucassen, M., Frey, I., Foad, M.A., England, J.G., Moffatt, S., Bailey, Paul, Noakes, T.C. and Ohno, H. (1997) Range and damage distributions in ultra-low energy boron implantation into silicon. In: Ion implantation technology--96: proceedings of the Eleventh International Conference on Ion Implantation Technology. Institute of Electrical and Electronics Engineers, pp. 527-530. ISBN 9780780332898

Metadata only available from this repository.
Item Type: Book Chapter
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Schools: School of Applied Sciences
School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Sharon Beastall
Date Deposited: 06 Sep 2012 09:39
Last Modified: 02 Sep 2013 11:25
URI: http://eprints.hud.ac.uk/id/eprint/14720

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