Search:
Computing and Library Services - delivering an inspiring information environment

Development of the interface at room and low temperature

Thornton, J.M.C., Weightman, P., Bailey, Paul, Woolf, D.A., Laine, A.D. and Evans, D.A. (1996) Development of the interface at room and low temperature. Applied Surface Science, 104-10. pp. 234-239. ISSN 0169-4332

Metadata only available from this repository.

Abstract

The alkali-metal/III–V semiconductor interface is a model system with which to study overlayer metallization and Schottky barrier development. Until now, typically the cleaved (110) surfaces of the semiconductor have been utilized in this respect, though in this work we have used the Ga-vacancy (2 × 2) reconstructed surface of GaAs(111)A as the starting surface. This surface is known to exhibit many similarities with the cleaved (110) surface, due to the separation of empty and filled dangling bonds onto the Ga and As surface atoms respectively. We have found through using soft X-ray photoemission from both core-level and valence-band features that the interface is remarkably unreactive, with almost no change in the Ga 3d lineshape with Na deposition at low temperatures. With regard to the growth-mode, work-function variation and band-bending however, the behaviour is close to that found for the cleaved surface. The onset of the Na LVV Auger transition only occurs after metallization begins and is consistent with ionic bonding to the substrate, though the substrate core-level development points to a reduced charge transfer with respect to the (110) surface.

Item Type: Article
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Schools: School of Applied Sciences
Related URLs:
Depositing User: Sharon Beastall
Date Deposited: 06 Sep 2012 09:19
Last Modified: 06 Sep 2012 09:19
URI: http://eprints.hud.ac.uk/id/eprint/14719

Item control for Repository Staff only:

View Item

University of Huddersfield, Queensgate, Huddersfield, HD1 3DH Copyright and Disclaimer All rights reserved ©