Search:
Computing and Library Services - delivering an inspiring information environment

Doping of few-layered graphene and carbon nanotubes using ion implantation

Bangert, U., Bleloch, A., Gass, M., Seepujak, A. and Van den Berg, Jakob (2010) Doping of few-layered graphene and carbon nanotubes using ion implantation. Physical Review B, 81 (24). p. 245423. ISSN 1098-0121

Metadata only available from this repository.

Abstract

Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Applied Sciences
Related URLs:
Depositing User: Sharon Beastall
Date Deposited: 03 Jan 2012 12:15
Last Modified: 22 May 2012 15:55
URI: http://eprints.hud.ac.uk/id/eprint/12269

Item control for Repository Staff only:

View Item

University of Huddersfield, Queensgate, Huddersfield, HD1 3DH Copyright and Disclaimer All rights reserved ©