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Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

Conard, Thierry, Franquet, Alexis, Vandervorst, Wifried, Reading, Michael, Van den Berg, Jakob, Van Elschocht, Sven, Schram, Tom, Adelmann, Christoph and De Gendt, Stefan (2008) Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. ECS Transactions, 16 (5). pp. 433-442. ISSN 1938-5862

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Abstract

The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals. In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000oC N2 annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5 at the TaN/HfO2 interface.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Applied Sciences
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Depositing User: Sharon Beastall
Date Deposited: 03 Jan 2012 10:09
Last Modified: 22 May 2012 15:09
URI: http://eprints.hud.ac.uk/id/eprint/12247

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