Conard, Thierry, Franquet, Alexis, Vandervorst, Wifried, Reading, Michael, Van den Berg, Jakob, Van Elschocht, Sven, Schram, Tom, Adelmann, Christoph and De Gendt, Stefan (2008) Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. ECS Transactions, 16 (5). pp. 433-442. ISSN 1938-5862Metadata only available from this repository.
The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals. In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000oC N2 annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5 at the TaN/HfO2 interface.
|Subjects:||Q Science > QC Physics|
|Schools:||School of Applied Sciences|
|Depositing User:||Sharon Beastall|
|Date Deposited:||03 Jan 2012 10:09|
|Last Modified:||22 May 2012 15:09|
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